Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

Electromigration failure mode concerning a negative resistance shift of 4%–11% and cathode burnout was reported for Cu interconnects buried in porous low-k in this paper. Evidence for oxidation and debonding of Ta/TaN liner at high temperature was revealed, which was demonstrated to have been enabled by the unsealed porous low-k due to moisture uptake. The cathode burnout was thus attributed to severe Joule heating induced in the insulated liner after oxidation. The resistance decay of Cu also exhibited to be mainly consistent with the calculation from specularity recovery of electron scattering at the Cu/Ta interface after oxidation and debonding of the liner, although other factors like strain relaxation may also have some contribution.