Growth of epitaxial CoSi2 film on Si (100) substrate induced by an interfacial Ti layer

Abstract Ti and Co films were sequentially deposited on Si(100) substrate by ion beam sputtering. The Co/Ti/Si was treated by a multistep annealing with temperature from 550 to 900°C in nitrogen environment. The interfacial Ti layer dissolved the native oxide, providing the following Co-Si reaction an atomically clean silicon surface. This led to the successful growth of epitaxial CoSi 2 films on Si(100) substrate. A thin layer of TiN(O) was formed on top of the epitaxial CoSi 2 . The values of RBS/channeling minimum yield χ min for the epitaxial CoSi 2 films were 11–12%.