Влияние корреляции в распределении примесных дефектов на параметры связанных плазмон-lо-фононных мод в монокристаллах GaAs:Te

The results of investigation of the infrared reflectivity spectra for series of Czochralski grown tellurium doped gallium arsenide single crystals with free carriers concentration n°=4. 1017 ÷З .1018 см -3 are given. The concentration dependences of phonon and plasmon damping parameters are obtained. The data are interpreted from the point of view of self-organization of the impurity component.