Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel Structure

Ferroelectric (FE) negative capacitance (NC) MOSFETs is investigated in depth with a full real-space atomic simulator. For the first time, Gibbs-free energy of the whole atomic system is employed to determine the appropriate operation region in polarization-electric-field ( ${P}$ – ${E}$ ) path of the FE layer for FE MOSFETs. With different FE thicknesses, the operation path of the FE layer in MOS structures can be hysteresis or hysteresis-free. For MOSFET structures, the operation path of FE layer will vary with different FE materials. With proper device parameters, the NC effect in FE layer can be obtained with minimum Gibbs-free energy of the MOS and MOSFET structures. The body factor, ${dV}_{G}/{d} \Psi _{S}$ , is obtained with the real-space structure to reflect the influence of the FE layer and optimize the device performance. With the FE layer of the same thickness, the NC-FET with longer channel has a larger body factor which causes the tradeoff between low tunneling current and small body factor. This tradeoff makes it difficult to improve the subthreshold swing by changing the gate length. In addition, the effect of floating metal layer between FE and SiO 2 layers in NC-FETs is studied in detail with atomic level real-space analysis for different gate lengths. The metal layer has a stronger influence on the electric characteristics of NC-FETs with longer channel.