Single-step sputtered Cu2SnSe3 films using the targets composed of Cu2Se and SnSe2

Abstract Cu 2 SnSe 3 thin films were prepared by single-step D.C. sputtering at 100–400 °C for 3 h using targets composed of Cu 2 Se and SnSe 2 in three different ratios of 2/1 (target A), 1.8/1 (target B), and 1.6/1 (target C). The advantages of self-synthesized SnSe 2 instead of commercially available SnSe for depositing Cu 2 SnSe 3 thin films were demonstrated. Effects of target composition and substrate temperature on the properties of Cu 2 SnSe 3 thin films were investigated. Structure, surface morphology, composition, electrical and optical properties at different process conditions were measured. The 400 °C-sputtered films obtained from target B display with direct band gap of 0.76 eV, electrical resistivity of 0.12 Ω cm, absorption coefficient of 10 4 –10 5  cm − 1 , carrier concentration of ∼ 1.8 × 10 19  cm − 3 , and electrical mobility of 2.9 cm 2 /V s.