New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate

A non-polar Fabry-Perot (FP) GaN laser has been demonstrated after the removal of its native free-standing GaN substrate, which was achieved using a new laser fabrication method. Threshold current density of the m-plane laser was measured to be as low as 2.15 kA/cm2 and the operating wavelength is 408.1nm. The method used an epitaxial lateral overgrowth and cleavable technique to remove the laser device from the GaN substrate. Moreover, the reported fabrication method can be applied to realize semi-polar devices from free-standing GaN semi-polar substrates.