Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors with Pt/Pb5Ge3O11/ZrO2/Si Structure

The first metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS FETs) using Pt/Pb5Ge3O11/ZrO2/Si structure has been successfully fabricated. The integration process is simple and reliable, and it is fully compatible with conventional complementary metal oxide semiconductor (CMOS) process. The smallest working device obtained is 0.3 µm×0.5 µm (L×W). The memory window is as large as 3 V and it is not dependent on device size. The endurance of the device is at least 108 cycles without degradation. The memory window decreased to 80% and 75% of initial values after 104 seconds retention tests at room temperature and 100°C respectively.