Mechanism of arsenic incorporation in MOVPE growth of CdTe layers

Abstract The mechanism of As incorporation in CdTe layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) is reported. Triethylarsine (TEAs) was used as a dopant source. The As incorporation decreased with the DETe flow rate under a fixed DMCd flow condition. On the other hand, the As incorporation increased as the growth temperature was decreased form 425 to 375°C. The As incorporation efficiency for TEAs was estimated to be about 0.1%, which is nearly equal to that for AsH 3 . Since the pyrolytic temperature for TEAs is much lower than for AsH 3 , these results indicate that the As incorporation is not dominated by the pyrolitic efficiency of the dopant source, but by the sticking rate of As species onto Cd species.