RTN and LFN Noise Performance in Advanced FDSOI Technology

This work presents the impact of carrier distribution in RTN and LFN performance. Using ad-hoc devices in 22nm FDSOI technology, we show how the free carrier distribution in the conduction channel is modulated by the applied back-bias as well as by the integrated well type. Appropriate use of back-bias potential and n-type well leads to minimum device noise overcoming standard bulk technology.