Suppression of reverse recovery ringing 3.3kV/450A Si/SiC hybrid in low internal inductance package: Next high power density dual; nHPD2

Suppression of reverse recovery ringing from 3.3kV Si-IGBT SiC Schottky barrier diode hybrid was verified. Reducing loop inductance, consisting of internal module, busbar connection and capacitor, is effective. To realize low inductance within the module and external connection with busbar, the gap between p and n terminal is minimized whilst maintaining the creepage and clearance required by regulation standards. Functional isolation is adopted instead of basic isolation. We achieved an inductance value 9nH for a 3.3kV, 450A dual IGBT, that leads to the extinction of reverse recovery oscillation. Details of switching characteristics of Si + SiC hybrid module is compared with that of Si IGBT module with low inductance.