ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

Abstract Synthetic diamond crystals of type IIa irradiated with 9–18 MeV phosphorus ions at room temperature to fluences 4 × 10 12 −4 × 10 15 ions cm −2 were studied by using electron spin resonance (ESR) technique. The degree of amorphization increasing with the fluence is manifested in the variation of the temperature dependence of the linewidth of the ESR signal of the dangling bonds. Both the ESR signal intensity and the annealing at 1800°C under 6 GPa have indicated presence of a critical fluence initiating irreversible amorphization.