Crystal structure of TiN film fabricated by reactive sputtering on Si(100) substrate

The crystal structure of TiN film fabricated on a Si(100) surface by reactive sputtering was studied by means of X-ray diffraction. When the N2 flow rate was less than 0.058, hexagonal Ti was deposited. The [001] axis of Ti was normal to the substrate face. When the N2 flow rate was more than 0.091, cubic TiN was deposited. The [111] axis of TiN was normal to the substrate face.