Chapter 41 – Properties of thermoelectric device with (BixSb1−x)2(TeySe1−y)3 materials

Publisher Summary This chapter focuses on the properties of refrigeration of thermoelectric devices with (Bi x Sb 1−x ) 2 (Te y Se 1−y ) 3 materials. The electrical properties of thermoelectric materials are measured from 80–300 K. Power factor of materials are given, respectively. Thermoelectric materials are of interest for applications as heat pumps and power generators. The COP of thermoelectric devices is quantified by the figure of merit, ZT, where Z is a measure of thermoelectric devices and T is the absolute temperature. The (Bi x Sb 1-x ) 2 (Te y Se 1-y ) 3 alloys are state-of-the-art room temperature materials. The electrical properties of materials have been measured as a function of temperature. The properties of bulk thermoelectric devices have been measured. When the hot side temperatures are 285 K and 200 K, the cooling temperature differences are 49.5 K and 17.5 K, respectively. The maximum cooling power obtained is 13 W when the input power is 25 W. The properties of thermoelectric devices have been studied at different temperature, the cooling power and cooling temperature of thermoelectric devices are given.