Vapor transport of nonstoichiometric CdTe in closed ampoules

Abstract CdTe crystals were grown by the vertial unseeded vapor growth technique. Charge compositions varied in the range of CdTe 1±§ , where 0≤§ 2 and Cd were calculated for the growth conditions. Correlation between growth rate measurements and calculated vapor pressures suggests a noncongruent sublimation of CdTe.