High-Responsivity Flexible Photodetectors based on MOVPE-MoS 2

Two-dimensional (2D) layered materials, in particular semiconducting transition metal dichalcogenides (TMDCs), are promising candidates for optoelectronic devices. The TMDC molybdenum disulfide $(\mathrm{MoS}_{2})$ has a bandgap dependent on the number of monolayers [1] and shows high optical absorption even in ultrathin and inherently flexible layers. TMDC photodetectors have been demonstrated [2], [3], however most 2D-based devices were built on rigid substrates using small exfoliated flakes. Alternatively, metal-organic vapor phase epitaxy (MOVPE) offers a highly scalable deposition method for homogeneous and reproducible TMDC layers [4]. Here, we present for the first time metal-semiconductor-metal (MSM) photodetectors with low bias voltage and high responsivity based on MOVPE films transferred onto flexible substrates.