Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence

The epitaxial growth of InGaN was investigated by molecular beam epitaxy (MBE) on GaN templates grown by metal-organic chemical vapor deposition (MOCVD). Structural and optical properties of bulk InGaN and multiple quantum well (MQW) InGaN/GaN heterostructures were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). XRD measurements found InGaN bulk and heterostructure compositions to be consistent. The MQW films showed peak PL positions > 550 nm. The advantage of reducing template dislocation density was studied.