Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation

Abstract The SiO 2 /Si (3 nm)/SiO 2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5 × 10 16 ions/cm 2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2 /Si (3 nm)/SiO 2 layer will be discussed.