T EMPERATURE AN O BIAS EFFECTS O N T H E ELECT RICAL PROPERTIES OF CdS THIN F TLMS P REPAREO BY R. F. SPUTT ERING

T he electrical properties of rJ.-sputtered CdS thin films were studied from the point of view of the relationship between the sputtering process parameters and the resistivity and mobility of the deposited films. The processing parameters studied were the power or voltage applied to the target (in the range 0.24-2.82 W cm - 2 or equivalently 500-1600 V), the substrate temperature (60-300 oC), the gas pressure (2-30 mTorr) and the su bstrate bias voltage (from - 200 to OV). The inter­ dependence ofthe substrate temperature and the input power as well as the relation between the self-bias voltage and the gas pressure were evaluated. The paper focuses on the conditions governing the electrical properties of the films. Resistivities from 10 8 2 10 to Q cm and mobilities in the range 2-6 cm V -1 S - 1 were obtained depending on the production conditions.