The Effect of Arsenic Doping on the Performance of CdSe x Te 1-x /CdTe Solar Cells

The effect of Arsenic doping in the CdSe x Te 1-x (CST)/CdTe solar cells with different Se (x) compositions and processed under various CdCl 2 annealing temperatures has been investigated. The superstrate cell configuration was ITO/MZO/CST: As/CdTe/Back Contact. The CST was doped with Arsenic during the CSS deposition. The Se (x) composition of the CST was varied between_-6 and 27%. The V oc decreased and J sc increased at higher Se (x) compositions for both undoped and doped cells, due to a decrease in the bandgap of CST. For undoped cells, the maximum net p-doping was found to be around 3.20E+14 cm-3 for 22% Se composition, and for Arsenic doped cells 1.87E+15 cm-3 for 27% Se composition. The V oc for the Arsenic doped cell was found to be 30-40 mV lower than the undoped cells presumably due to lower minority carrier lifetimes.