A study of resist outgassing as a function of differing photoadditives

The effect of different photoadditives in high and low activation energy resist resins on resist outgassing during lithographic exposure was studied by quartz microbalance and gas chromatography/ mass spectroscopy techniques. The resist outgassing was analyzed both qualitatively and quantitatively and structure-property relashionships were developed between resist outgassing and the molecular structure of photoacid generators and additives. The photoadditives examined include, aryl iodonium perfluoroalkylsulfonates, triarylsulfonium perfluoroakylsulfonates, photogenerators of sulfamic acids (Sweet PAG analogs), 2-nitrobenzyl PAG's and doxyl derivatives.