Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and method for manufacturing layered semiconductor device

Provided is a composition capable of forming an interlayer filler layer for a layered semiconductor device, said interlayer filler layer having a high K1c value, a high glass transition temperature and a low viscosity and assuring a stable bonding even if the surrounding environment varies. The composition comprises an epoxy compound (A) having a viscosity of 50 Pa·s or lower at 25 ° C, an amine compound (B) having a melting point or softening point of 80 ° C or higher, and another amine compound (C) having a melting point or softening point of lower than 80 ° C, wherein the amount of the amine compound (C) is 1 part by weight or more and less than 40 parts by weight per 100 parts by weight of the sum of the amine compound (B) and the amine compound (C).