Long-wavelength HgCdTe on silicon negative luminescent devices

We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at 7.2μm, and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, Jmin, of 0.84A∕cm2 at 295K) needed to drive these devices makes them suitable for a range of device applications.