Terahertz transport dynamics in the metal-insulator transition of V2O3 thin film

Abstract The dynamic behavior of thermally-induced metal-insulator transition of V 2 O 3 thin film on Si substrate grown by reactive magnetron sputtering was investigated by the terahertz time-domain spectroscopy. It was found that the THz absorption and optical conductivity of the thin films are temperature-dependent, and the THz amplitude modulation can reach as high as 74.7%. The complex THz optical conductivity in the metallic state of the V 2 O 3 thin films can be well-fitted by the Drude-Smith model, which offer the insight into the electron transport dynamic during the metal-insulator transition of the thin film.