A model for the evolution of implanted oxygen profiles in silicon

Abstract The model described predicts the distribution of oxygen implanted in silicon, simulating the formation of a buried layer of SiO 2 . It takes into account a phase change due to the formation of SiO 2 , changes in the projected range and higher moments of the oxygen distribution, sputter etching and redistribution of oxygen. The sensitivity of the model to all the modelling parameters is demonstrated and oxygen concentrations calculated for various implanted doses are compared with experimental results obtained by Rutherford backscattering, cross-sectional transmission electron microscopy and secondary ion mass spectrometry.