Sub-100 nm device fabrication using proximity X-ray lithography at five levels

Proximity X-ray lithography (PXL) is a promising technology for fabricating ultra-large-scale integrated (ULSI) devices smaller than 100 nm because it offers high-resolution capabilities and dimensional control with high throughput. We used PXL at five levels (mark, isolation, gate, contact, wiring) and fabricated 100-nm complicated dense patterns and sub-100-nm channel length MOSFETs. In this paper, we discuss lithographic performance and the performance of the MOSFET device.