Electroluminescence, charge trapping and quenching in Eu implantes SiO2-Si structures

This paper reports an analysis of the electroluminescence (EL) spectra changing, charge trapping and EL quenching during operation of the multicolor Eu implanted metal-oxide-silicon light-emitting devices (MOSLEDs). The nature of the changing of the light-emitting color in the MOSLED is discussed. It is shown that the EL life time of the Eu implanted MOSLED is considerably longer than that of high-efficiency MOSLEDs with Tb and Ge implanted oxide. It is demonstrated that a reduced EL intensity, enhanced negative charge trapping and a good EL stability are associated with enhanced clustering in the Eu implanted oxide during high-temperature furnace annealing. The comparison with the operation of the MOSLED fabricated by using the flash lamp annealing technique is performed.