Topographical characterization of Ar-bombarded Si(111) surfaces by atomic force microscopy

Abstract We used atomic force microscopy to study the topographical changes induced on Si(1 1 1) surfaces by 10–22 keV Ar + bombardment. The irradiation was carried on normal to the surface with doses in the 1–60×10 16 ions/cm 2 range. We observed a first generation of blisters at a critical dose around 3×10 16 ions/cm 2 , which flakes off at 19×10 16 ions/cm 2 , and a second generation of smaller blisters between 35 and 45×10 16 ions/cm 2 . Measurements of the mean surface height show that at low irradiation doses the surface inflates because of voids produced by Ar + implantation. For doses greater than 20×10 16 Ar + /cm 2 the height decreases linearly because of sputtering, with a slope corresponding to a sputtering yield of 1.4. Finally, we present electron spectra produced during grazing proton bombardment of samples whose topography has been modified by Ar irradiation.