EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond
2014
EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm 2 ) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.
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