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A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications
A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications
1999
B. Agarwala
Michael D. Armacost
S. Biesemans
L. Burrell
Bomy A. Chen
K. Han
David L. Harmon
J. Heidenreich
K. Holloway
Terence B. Hook
S Kapur
T Kebede
D. Kiesling
Peter Kim
G. Matusiewicz
Joseph M. Lukaitis
P. Nguyen
N. Prabhakara
Stewart E. Rauch
Nivo Rovedo
L. Saraf
James A. Slinkman
Henry H.K. Tang
Robert C. Wong
Sally J. Yankee
K.-H. Allers
Andreas K. Augustin
G. Bräse
E. Demm
C. Derby
Gerald Friese
F. Grellner
Erdem Kaltalioglu
Mark Hoinkis
Chih-Yung Lin
R. Mahnkopf
O. Prigge
Thomas Schafbauer
T. Schiml
Klaus Schruefer
S Srinivasan
M. Stetter
G. Unger
R. Zoeller
Keywords:
Electronic engineering
Materials science
Space technology
Doping
Copper
CMOS
Integrated injection logic
Threshold voltage
Static random-access memory
Electrical engineering
Microelectronics
copper metallurgy
dual gate
Correction
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