The role of higher order modes in the characterization of a shielded transition to a dielectric waveguide

The S-parameters of a shielded sub-mm/THz monolithic transition between a layered rigged dielectric waveguide and a power source are determined from results obtained by an integral equation mode matching method. The impact of the higher-order modes was minimized by designing an appropriate shielding structure for the transition. A simple model was developed for determining the transition's S-parameters. The variation of the S-parameters over frequency and conductor width is shown, and the transition is found to be very efficient over a wide frequency band and a broad range of widths. >