X-ray investigation of annealed CeO2 films prepared by sputtering on Si substrates

Abstract Thin films of CeO x are radio frequency magnetron sputtered on n-type (100) Si wafers from CeO 2 target. Structural investigations of CeO 2 /Si system after rapid thermal annealing ( RTA ) in the range of 800–1300 °C are presented. As-grown films are a mixture of amorphous and polycrystalline phases of CeO 2 , Ce 2 O 3 and SiO 2 . Structure and phase composition of the films after RTA treatment are strongly time and temperature dependent. Complete transition from amorphous to polycrystalline phase is observed after RTA treatment at 1100 °C for 180 s. Arising of Ce–Si interlayer is assumed for these conditions. Formation of p–n junction is observed at elevated RTA temperature of 1300 °C.