Color-Sensitive Si-Photodiode Using Porous Silicon Interference Filters

A new method for the fabrication of color-sensitive Si-photodiodes is presented. Color sensitivity was achieved by using porous silicon multilayer stacks which act as interference filters if the formation parameters are controlled carefully. These filters were integrated in the upper, p+-type part of a p+n-junction. As expected, the spectral response of the photodiodes was determined by the transmission spectra of the filters, while the porous silicon had no significant influence on the electrical characteristics. The great advantage of this method over conventional ones is that it makes very cheap, fast filter fabrication requiring no expensive deposition process possible.