Analysis on the Thermal Stress of Al-Si Thin Film using DIC Method

In electronics, silicon-based metal thin films are a sort of common material structure. In practical applications, electronic packaging materials should show stable mechanical properties under temperature changes, as well as predicted and preventing the fatigue failure. In this paper, Digital Image Correlation method was employed to measure the thermal strain and thermal stress of silicon-based metal thin film. It has been investigated that the feasibility of DIC Method to determine the thermal stress of thin film and the impact of the temperature range on measurement. The heating process of thin film was simulated by a quarter thin film model. The results shows that the DIC method was well suitable to determine the thermal stress of thin film with low error. Besides, the longer the temperature range is, the more accurate the measuring is. This provides a method of undamaged test on the thermal stress of thin film.