Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates

A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A review on some possible treatments to passivate the Ge surface is discussed. Another important aspect is the activation of p- and n-type dopants to form the active areas in devices. Finally, Ge deep submicron n- and p-FET devices fabricated with this technique on germanium-on-insulator substrates, yield promising device characteristics, showing the feasibility of these substrates.