Extended Abstract: Front End Electronic for SiC Based Fast Neutron Sensors

Silicon carbide-based semiconductor detectors play a key role in radiation instrumentation. It is used to monitor and characterize different sources of ionizing radiations (UV and radioactive sources). The limit imposed by silicon in applications (nuclear installation, medical installation) which include high temperatures, and high doses of irradiation encourage the study and development devices with wide band gap (3.26 eV for 4H-SiC). Front-end electronics have been developed to detect fast neutrons beams with SiC semiconductor material. It is based on a transimpedance amplifier to analyze the shape of generated signal for fast neutrons applications. The methodology used to characterize this transimpedance amplifier is described and the results extracted from simulations and measurements are also presented. This architecture allows to analyze the signal form generated by the sensor with high capacitance, since analyzing waveforms in real time present challenges in terms of handling large amounts of data.