Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

In this paper, we apply numerical device simulation in the design of pseudomorphic HEMTs with improved linearity and reduced intermodulation products aimed at wireless communications applications. We show that in channel doped GaAs pHEMTs the introduction of a p-doped buffer layer significantly improves the device linearity leading to a 10 dB suppression of 3rd order distortion over a wide bias range with similar gain when compared with a more standard /spl delta/-doped GaAs pHEMT device.