GaN devices for microwave applications [FET/HEMT]

AlGaN/GaN field effect transistors offer spectacular improvements in performance compared to conventional III-V components. In particular they are well suited to applications requiring high levels of output power and are capable of producing RF output power levels approaching 12 W/mm of gate periphery with power added efficiency close to theoretical limits. This paper describes the current status of GaN based FETs and discusses circuit functions and system applications that can benefit from this disruptive technology.