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Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs
Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs
2018
Manikant Manikant
Serge Karboyan
Michael J. Uren
Kean Boon Lee
Zaffar H. Zaidi
P.A. Houston
Martin Kuball
Keywords:
Optoelectronics
Epitaxy
Doping
Coupling
Thermal conduction
Materials science
carbon doping
device to device
algan gan
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