Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

In attempt to prepare a high performance Al x Ga 1-x N based UV-B LED, a computer simulation has been performed on a typical UV-LED structure to find out the effect of threading dislocations on non-radiative recombination process. UVB LED structures were formed on using GaN and AlN based layers for comparison. Cracks were generated in the device structure formed on GaN underlayer. No cracks were observed on the device structure formed on AlN under layer. Much better structure was formed when the base AlN was grown by high temperature MOVPE.