A 60 GHz-band ultra low noise planar-doped HEMT

An ultra-low-noise AlGaAs/InGaAs HEMT (high electron mobility transistor) with a 0.15- mu m T-shaped gate and an Si planar-doped layer has been developed for millimeter-wave systems. The HEMT showed an extremely reduced minimum noise figure of 1.6 dB and a high associated gain of 6.5 dB at 60 GHz. The noise figure is the lowest value ever reported for the AlGaAs/InGaAs pseudomorphic HEMT. >