High Power Silicon-Germanium Photodiodes for

We demonstrate high current operation of an evanes- cently coupled Gewaveguide n-i-p photodetector grownon top of a Siribwaveguide.A7.4 m 500 mdevicewasfoundtodissipate 1.003 W of power (125.49 mA at V). 2-D thermal simulations of the device show that the relatively high thermal conductivities of the intrinsic Ge region and the doped Si layer result in effi- cient heat transfer and hence, lower absorber temperatures when compared to a similar InP based waveguide photodiode. Addition- ally,todeterminethefeasibilityofthesedevicesforanalogphotonic applications, we performed large signal and small signal radio fre- quency (RF) measurements as well as linearity measurements. At 1 GHz and 40 mA of photocurrent, a third order output intercept point (OIP3) of 36.49 dBm is measured. The maximum RF power extracted at 1 GHz is 14.17 dBm at 60 mA of photocurrent and 7 V reverse bias.