Reactive Ion Beams Sputtering of Vanadium Oxides Films for Uncooled Microbolometer

Vanadium oxides thin films for uncooled bolometric detectors have been fabricated on Si3N4-film-coated Si substrates by low temperature reactive ion beam sputtering in a controlled oxygen atmosphere. The typical growth temperature is kept at 200°C during sputtering, which is compatible with the post-CMOS technology. The as-deposited film exhibits sheet resistance and temperature coefficient resistant of 32 kΩ and −0.025 K−1 at room temperature, respectively.