Effect on electrical performance of titanium co-sputtered IZO active-channel thin-film transistor

We investigated the electrical performance of Ti–IZO active-channel layer thin-film transistors (TFTs) using a radio frequency (RF) magnetron co-sputtering system to co-sputter IZO and Ti targets. The samples were fabricated by changing the RF gun power of the IZO. The other parameters such as the RF gun power of the Ti target, oxygen partial pressure [O2/(Ar + O2)], and initial and process pressure of the chamber were unchanged. Unlike the sample sputtered only with IZO, the thin films of the Ti–IZO samples could control the oxygen vacancy because Ti reacts with the oxygen in the IZO. Therefore, Ti–IZO thin films can suppress the carrier concentration and thus have an effect on the electrical performance of TFTs.