Grid-controlled vertical double-diffusion metal-oxide semiconductor field effect transistor

The invention discloses a grid-controlled vertical double-diffusion metal-oxide semiconductor field effect transistor. A channel region and a JFET region of the transistor are wrapped in gate electrodes from the upper surface, the front side face and the rear side face, so that when the transistor is powered on in the forward direction, majority carrier accumulation layers are formed on the channel region of a device and the JFET region of the device respectively through the expanded grid electrodes, the on resistance can be decreased remarkably, and the output current can be increased. Moreover, due to the capability of folding grids for controlling electric charges of the JFET region, the punch through problem caused by the shrinkage of the size of the JFET region can be avoided, so that the charge sharing effect of cellular cells is promoted, vertical electric field distribution is optimized, and the puncture voltage of the device is increased. Besides, cellular miniaturization is facilitated due to the shrinkage of the size of the JFET region, cellular density is increased, and thus the larger current can be obtained.