Ranges of 10–350 keV H and H2 ions in (1 1 1) diamond

Abstract Understanding of the implantation process of the hydrogen ions into diamond is of great technological interest for the fabrication of the color centers required for quantum computing and sensing applications. Here, the hydrogen range and defect-depth distribution in (1 1 1) HPHT diamond irradiated with 10–350 keV/proton H + and H 2 + ions in non channeling direction are experimentally measured by means of cross-section transmission electron microscopy (X-TEM) and secondary ion mass spectroscopy (SIMS). Surface morphology was studied by atomic force microscopy. It is found that the proton ranges at energies below 100 keV are significantly (more than 50%) underestimated in TRIM simulations whereas measured profiles coincide well with simulated ones at ion energies above 100 keV. The difference at low energies is due to approximations used in TRIM code. First is overestimation of electron energy losses. In addition, binary collision approximation and/or ZBL potential in this energy range are not suitable for proton stopping in diamond.