Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy

Highly oriented thin film In{sub 2}O{sub 3} was heteroepitaxially grown on optically polished (100) plane of single crystalline yttria stabilized zirconia (YSZ) substrate using Molecular Beam Epitaxy (MBE). Full-width at half-maximum (FWHM) of X-ray rocking-curve showed 0.08{degree} for In{sub 2}O{sub 3} 200 nm thick layers indicating that excellent uniformity orientation compared with the heteroepitaxially-grown In{sub 2}O{sub 3} epitaxially deposited by the conventional methods such as electron-beam (e-beam) evaporation or sputtering method. The minimum yield ({chi}{sub min}) of the MBE grown in In{sub 2}O{sub 3} film of Rutherford Backscattering Spectrometry (RBS) was also extremely small value 3.1%, implying the very high crystallinity.