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Acemap > Paper > p‐SiGeへの2×10~ 9 Ωcm2接触抵抗率の周りの低温達成で形成されたTiSi(Ge)接触【Powered by NICT】

p‐SiGeへの2×10~ 9 Ωcm2接触抵抗率の周りの低温達成で形成されたTiSi(Ge)接触【Powered by NICT】

2017 
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