Superior Stress-Migration resistance of highly textured Al[111] films for Surface Acoustic Wave device electrodes

Highly textured Al[111] films have been grown on an ultrathin metal underlayer 1 nm thick by Ion-Beam Sputtering (IBS). Surface Acoustic Wave (SAW) devices with these highly textured Al[111] electrodes were fabricated and their resistance to Stress-Migration (SM) was investigated. They exhibited superior SM resistance; their lifetimes were more than 3,000 times as long as those with evaporated polycrystalline Al electrodes.