Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.
1996
Abstract : Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures (3000C, 4000C).
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