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Analysis of DRAM standby current failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor
Analysis of DRAM standby current failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor
2005
Mann-Ho Cho
Y. I. Kim
J. Choi
D. S. Woo
K.P. Lee
Y.J. Park
W. S. Lee
B. I. Ryu
Keywords:
Transistor
Electron
Electronic engineering
PMOS logic
Dram
Materials science
hot electron
Optoelectronics
standby current
Correction
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